Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors
Identifieur interne : 000124 ( Chine/Analysis ); précédent : 000123; suivant : 000125Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors
Auteurs : RBID : Pascal:13-0289711Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15 nm above a local gate electrode. The charge density in the nanowires can be controlled by a small change in the gate voltage. For large negative gate voltages, the number of conducting channels is reduced gradually, and we observe a stepwise decrease of both conductance and critical current before the conductance vanishes completely.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000784
- to stream Main, to step Repository: 000631
- to stream Chine, to step Extraction: 000124
Links to Exploration step
Pascal:13-0289711Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors</title><author><name sortKey="Abay, Simon" uniqKey="Abay S">Simon Abay</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1><s2>412 96 Göteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>412 96 Göteborg</wicri:noRegion></affiliation></author><author><name sortKey="Persson, Daniel" uniqKey="Persson D">Daniel Persson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1><s2>412 96 Göteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>412 96 Göteborg</wicri:noRegion></affiliation></author><author><name sortKey="Nilsson, Henrik" uniqKey="Nilsson H">Henrik Nilsson</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division of Solid State Physics, Lund University, Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation></author><author><name sortKey="Xu, H Q" uniqKey="Xu H">H. Q. Xu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division of Solid State Physics, Lund University, Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>221 00 Lund</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Fogelstrom, Mikael" uniqKey="Fogelstrom M">Mikael Fogelström</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1><s2>412 96 Göteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>412 96 Göteborg</wicri:noRegion></affiliation></author><author><name sortKey="Shumeiko, Vitaly" uniqKey="Shumeiko V">Vitaly Shumeiko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1><s2>412 96 Göteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>412 96 Göteborg</wicri:noRegion></affiliation></author><author><name sortKey="Delsing, Per" uniqKey="Delsing P">Per Delsing</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1><s2>412 96 Göteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>412 96 Göteborg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0289711</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0289711 INIST</idno><idno type="RBID">Pascal:13-0289711</idno><idno type="wicri:Area/Main/Corpus">000784</idno><idno type="wicri:Area/Main/Repository">000631</idno><idno type="wicri:Area/Chine/Extraction">000124</idno></publicationStmt><seriesStmt><idno type="ISSN">1530-6984</idno><title level="j" type="abbreviated">Nano lett. : (Print)</title><title level="j" type="main">Nano letters : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Calcium nitride</term><term>Charge density</term><term>Gallium tellurides</term><term>Gates</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Nanostructured materials</term><term>Nanowires</term><term>Ohmic contacts</term><term>Short channel</term><term>Superconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Nanofil</term><term>Nanomatériau</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Canal court</term><term>Contact ohmique</term><term>Electrode commande</term><term>Densité charge</term><term>Supraconducteur</term><term>Tellurure de gallium</term><term>Nitrure de calcium</term><term>InAs</term><term>8107V</term><term>8107B</term><term>7478N</term><term>7340C</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15 nm above a local gate electrode. The charge density in the nanowires can be controlled by a small change in the gate voltage. For large negative gate voltages, the number of conducting channels is reduced gradually, and we observe a stepwise decrease of both conductance and critical current before the conductance vanishes completely.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1530-6984</s0></fA01><fA03 i2="1"><s0>Nano lett. : (Print)</s0></fA03><fA05><s2>13</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors</s1></fA08><fA11 i1="01" i2="1"><s1>ABAY (Simon)</s1></fA11><fA11 i1="02" i2="1"><s1>PERSSON (Daniel)</s1></fA11><fA11 i1="03" i2="1"><s1>NILSSON (Henrik)</s1></fA11><fA11 i1="04" i2="1"><s1>XU (H. Q.)</s1></fA11><fA11 i1="05" i2="1"><s1>FOGELSTRÖM (Mikael)</s1></fA11><fA11 i1="06" i2="1"><s1>SHUMEIKO (Vitaly)</s1></fA11><fA11 i1="07" i2="1"><s1>DELSING (Per)</s1></fA11><fA14 i1="01"><s1>Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology</s1><s2>412 96 Göteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Division of Solid State Physics, Lund University, Box 118</s1><s2>221 00 Lund</s2><s3>SWE</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University</s1><s2>Beijing 100871</s2><s3>CHN</s3><sZ>4 aut.</sZ></fA14><fA20><s1>3614-3617</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27369</s2><s5>354000501515550260</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>27 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0289711</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nano letters : (Print)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15 nm above a local gate electrode. The charge density in the nanowires can be controlled by a small change in the gate voltage. For large negative gate voltages, the number of conducting channels is reduced gradually, and we observe a stepwise decrease of both conductance and critical current before the conductance vanishes completely.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07V</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="03" i2="3"><s0>001B70D78N</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C40C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Nanofil</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Nanowires</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Canal court</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Short channel</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Canal corto</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Contact ohmique</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Ohmic contacts</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Electrode commande</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gates</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Densité charge</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Charge density</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Supraconducteur</s0><s5>15</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Superconductors</s0><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Tellurure de gallium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Gallium tellurides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Nitrure de calcium</s0><s5>17</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Calcium nitride</s0><s5>17</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Calcio nitruro</s0><s5>17</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>8107V</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>7478N</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>7340C</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>273</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000124 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd -nk 000124 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Chine
|étape= Analysis
|type= RBID
|clé= Pascal:13-0289711
|texte= Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors
}}
| This area was generated with Dilib version V0.5.77. |  |